FDN8601

Specifications

Parça Durumu

Active

Turn On Delay Time

4.3 ns

Fabrika Tedarik Süresi

8 Weeks

Rise Time

1.3ns

Weight

30mg

Current Continuous Drain Id25

2.7A Ta

Feedback Capmax Crss

5 pF

Drive Voltage Max Rds On Min Rds On

6V 10V

Fall Time Typ

3.4 ns

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

DUAL

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Fet Type

N-Channel

Drain To Source Breakdown Voltage

100V

JESD-609 Kodu

e3

Power Dissipation

1.5W

Nominal Vgs

3 V

Continuous Drain Current Id

2.7A

Yayın Yılı

2010

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Rds On Max Id Vgs

109m Ω @ 1.5A, 10V

Threshold Voltage

3V

ECCN Kodu

EAR99

Power Dissipation Max

1.5W Ta

Gate Charge Qg Max Vgs

5nC @ 10V

Number Of Elements

1

Element Configuration

Single

Terminal Sayısı

3

Uzunluk

1.4mm

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Input Capacitance Ciss Max Vds

210pF @ 50V

Yükseklik

940μm