FDN361BN

Specifications

Fall Time Typ

8 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Qualification Status

Not Qualified

Weight

30mg

Current Continuous Drain Id25

1.4A Ta

Rise Time

8ns

Fabrika Tedarik Süresi

10 Weeks

Parça Durumu

Active

Turn On Delay Time

3 ns

Fet Type

N-Channel

Contact Plating

Tin

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Continuous Drain Current Id

1.4A

Additional Feature

FAST SWITCHING

Power Dissipation

500mW

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

30V

ECCN Kodu

EAR99

Threshold Voltage

2.1V

Rds On Max Id Vgs

110m Ω @ 1.4A, 10V

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2017

Element Configuration

Single

Number Of Elements

1

Gate Charge Qg Max Vgs

1.8nC @ 4.5V

Power Dissipation Max

500mW Ta

Vgsth Max Id

3V @ 250μA

Kurşunsuz

Lead Free

Genişlik

2.92mm

Input Capacitance Ciss Max Vds

193pF @ 15V