Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Fet Type
- N-Channel
- Akım Değeri
- 1.9A
- Transistor Element Material
- SILICON
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Tin (Sn)
- Min Breakdown Voltage
- 30V
- Terminal Pozisyonu
- DUAL
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Dual Supply Voltage
- 30V
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Fall Time Typ
- 12 ns
- Turn On Delay Time
- 5 ns
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 10 Weeks
- Rise Time
- 12ns
- Current Continuous Drain Id25
- 1.9A Ta
- Weight
- 30mg
- Rds On Max Id Vgs
- 60m Ω @ 2.2A, 10V
- Threshold Voltage
- 1.6V
- ECCN Kodu
- EAR99
- Yayın Yılı
- 1998
- Montaj Tipi
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
- Reach Svhc
- No SVHC
- RoHS Durumu
- ROHS3 Compliant
- Power Dissipation
- 500mW
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Nominal Vgs
- 1.6 V
- Continuous Drain Current Id
- 1.9A
- Drain To Source Breakdown Voltage
- 30V
- JESD-609 Kodu
- e3
- Vgsth Max Id
- 2V @ 250μA
- Terminal Sayısı
- 3
- Uzunluk
- 2.92mm
- Operating Mode
- ENHANCEMENT MODE
- Vgs Max
- ±20V
- Input Capacitance Ciss Max Vds
- 235pF @ 10V
- Yükseklik
- 940μm
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