FDN352AP

Specifications

Dual Supply Voltage

-30V

Fall Time Typ

15 ns

Gerilim

30V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Turn On Delay Time

4 ns

Parça Durumu

Active

Akım

13A

Current Continuous Drain Id25

1.3A Ta

Rise Time

15ns

Fabrika Tedarik Süresi

10 Weeks

Akım Değeri

-1.3A

Fet Type

P-Channel

Contact Plating

Tin

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

25V

Terminal Pozisyonu

DUAL

Power Dissipation

500mW

Continuous Drain Current Id

-1.3A

Nominal Vgs

-2 V

Drain To Source Breakdown Voltage

-30V

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Threshold Voltage

-2V

Rds On Max Id Vgs

180m Ω @ 1.3A, 10V

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Yayın Yılı

2005

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Element Configuration

Single

Power Dissipation Max

500mW Ta

Number Of Elements

1

Gate Charge Qg Max Vgs

1.9nC @ 4.5V

Vgsth Max Id

2.5V @ 250μA

Vgs Max

±25V

Operating Mode

ENHANCEMENT MODE

Uzunluk

2.92mm