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FDMS8888

ON Semiconductor

FDMS8888

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Element Configuration
Single
Power Dissipation Max
2.5W Ta 42W Tc
Number Of Elements
1
Gate Charge Qg Max Vgs
33nC @ 10V
Vgsth Max Id
2.5V @ 250μA
Uzunluk
5mm
Operating Mode
ENHANCEMENT MODE
Vgs Max
±20V
Terminal Sayısı
5
Genişlik
6mm
Input Capacitance Ciss Max Vds
1585pF @ 15V
Yükseklik
1.05mm
Case Connection
DRAIN
Montaj
Surface Mount
Seri
PowerTrench®
Pin Sayısı
8
Nem Hassasiyeti (MSL)
1 (Unlimited)
Radyasyon Dayanımı
No
Turn Off Delay Time
23 ns
Kurşunsuz Kodu
yes
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Fall Time Typ
4 ns
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Parça Durumu
Active
Turn On Delay Time
9 ns
Weight
74mg
Current Continuous Drain Id25
13.5A Ta 21A Tc
Rise Time
6ns
Jesd30 Code
R-PDSO-N5
Fabrika Tedarik Süresi
26 Weeks
Fet Type
N-Channel
Kılıf / Paket
8-PowerTDFN
Terminal Kaplaması
Tin (Sn)
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Gate To Source Voltage Vgs
20V
Çalışma Sıcaklığı
-55°C~150°C TJ
Terminal Pozisyonu
DUAL
Avalanche Energy Rating Eas
54 mJ
Power Dissipation
42W

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