FDMS8880

Specifications

Vgsth Max Id

2.5V @ 250μA

Fet Type

N-Channel

Kılıf / Paket

8-PowerTDFN

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Terminal Sayısı

5

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

1585pF @ 15V

Terminal Pozisyonu

DUAL

Fall Time Typ

4 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Element Configuration

Single

Parça Durumu

Active

Turn On Delay Time

9 ns

Power Dissipation Max

2.5W Ta 42W Tc

Number Of Elements

1

Current Continuous Drain Id25

13.5A Ta 21A Tc

Weight

68.1mg

Rise Time

6ns

Fabrika Tedarik Süresi

18 Weeks

Gate Charge Qg Max Vgs

33nC @ 10V

Jesd30 Code

R-PDSO-N5

ECCN Kodu

EAR99

Rds On Max Id Vgs

8.5m Ω @ 13.5A, 10V

Radyasyon Dayanımı

No

Jedec95 Code

MO-240AA

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Turn Off Delay Time

23 ns

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Case Connection

DRAIN

Power Dissipation

2.5W

Avalanche Energy Rating Eas

60 mJ

Continuous Drain Current Id

13.5A