FDMS8820

Specifications

Rise Time

16ns

Jesd30 Code

R-PDSO-F5

Fabrika Tedarik Süresi

18 Weeks

Weight

68.1mg

Current Continuous Drain Id25

28A Ta 116A Tc

Turn On Delay Time

14 ns

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

13 ns

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Fet Type

N-Channel

Kılıf / Paket

8-PowerTDFN

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

30V

Continuous Drain Current Id

116A

Power Dissipation

78W

Avalanche Energy Rating Eas

294 mJ

Drainsource On Resistancemax

0.002Ohm

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

2m Ω @ 28A, 10V

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

88nC @ 10V

Number Of Elements

1

Power Dissipation Max

2.5W Ta 78W Tc

Element Configuration

Single

Input Capacitance Ciss Max Vds

5315pF @ 15V

Yükseklik

1.05mm

Kurşunsuz

Lead Free

Genişlik

6mm

Uzunluk

5mm

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Terminal Sayısı

5