FDMS8670S

Specifications

Transistor Element Material

SILICON

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Pulsed Drain Currentmax Idm

200A

Fet Type

N-Channel

Kılıf / Paket

8-PowerTDFN

Akım Değeri

42A

Parça Durumu

Active

Turn On Delay Time

14 ns

Rise Time

19ns

Fabrika Tedarik Süresi

18 Weeks

Jesd30 Code

R-PDSO-F5

Weight

68.1mg

Current Continuous Drain Id25

20A Ta 42A Tc

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

10 ns

Montaj Tipi

Surface Mount

Drain Currentmax Abs Id

20A

Ambalaj

Tape & Reel (TR)

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Threshold Voltage

1.5V

Rds On Max Id Vgs

3.5m Ω @ 20A, 10V

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

30V

JESD-609 Kodu

e3

Power Dissipation

2.5W

Continuous Drain Current Id

42A

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Terminal Sayısı

5

Input Capacitance Ciss Max Vds

4000pF @ 15V

Kurşunsuz

Lead Free

Voltage Rated Dc

30V

Vgsth Max Id

3V @ 1mA

Power Dissipation Max

2.5W Ta 78W Tc

Gate Charge Qg Max Vgs

73nC @ 10V