FDMS86540

Specifications

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Terminal Pozisyonu

DUAL

Pulsed Drain Currentmax Idm

350A

Fet Type

N-Channel

Kılıf / Paket

8-PowerTDFN

Turn On Delay Time

28 ns

Parça Durumu

Active

Current Continuous Drain Id25

20A Ta 50A Tc

Weight

68.1mg

Rise Time

16ns

Jesd30 Code

R-PDSO-F5

Fabrika Tedarik Süresi

17 Weeks

Fall Time Typ

7.2 ns

Drive Voltage Max Rds On Min Rds On

8V 10V

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Drain Currentmax Abs Id

50A

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.0034Ohm

ECCN Kodu

EAR99

Rds On Max Id Vgs

3.4m Ω @ 20A, 10V

Drain To Source Breakdown Voltage

60V

JESD-609 Kodu

e3

Power Dissipation

2.5W

Continuous Drain Current Id

20A

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Uzunluk

5mm

Terminal Sayısı

5

Genişlik

5.75mm

Yükseklik

1.05mm

Input Capacitance Ciss Max Vds

6435pF @ 30V

Vgsth Max Id

4V @ 250μA

Power Dissipation Max

2.5W Ta 96W Tc

Number Of Elements

1

Gate Charge Qg Max Vgs

90nC @ 10V