FDMS86310

Specifications

Fet Type

N-Channel

Kılıf / Paket

8-PowerTDFN

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Terminal Pozisyonu

DUAL

Fall Time Typ

9 ns

Drive Voltage Max Rds On Min Rds On

8V 10V

Turn On Delay Time

28 ns

Parça Durumu

Active

Current Continuous Drain Id25

17A Ta 50A Tc

Weight

68.1mg

Rise Time

23ns

Jesd30 Code

R-PDSO-F5

Fabrika Tedarik Süresi

13 Weeks

ECCN Kodu

EAR99

Rds On Max Id Vgs

4.8m Ω @ 17A, 10V

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Drain Currentmax Abs Id

50A

RoHS Durumu

ROHS3 Compliant

Power Dissipation

96W

Continuous Drain Current Id

17A

Drain To Source Breakdown Voltage

80V

JESD-609 Kodu

e3

Vgsth Max Id

4.5V @ 250μA

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Uzunluk

5.1mm

Terminal Sayısı

5

Kurşunsuz

Lead Free

Genişlik

5.85mm

Yükseklik

1.05mm

Input Capacitance Ciss Max Vds

6290pF @ 40V

Element Configuration

Single

Power Dissipation Max

2.5W Ta 96W Tc

Number Of Elements

1

Gate Charge Qg Max Vgs

95nC @ 10V