Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Pozisyonu
- DUAL
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Element Material
- SILICON
- Transistor Application
- SWITCHING
- Fet Type
- N-Channel
- Contact Plating
- Tin
- Kılıf / Paket
- 8-PowerTDFN
- Pulsed Drain Currentmax Idm
- 120A
- Rise Time
- 26ns
- Fabrika Tedarik Süresi
- 7 Weeks
- Current Continuous Drain Id25
- 19A Ta 80A Tc
- Weight
- 68.1mg
- Parça Durumu
- Active
- Turn On Delay Time
- 31 ns
- Drive Voltage Max Rds On Min Rds On
- 8V 10V
- Fall Time Typ
- 9 ns
- RoHS Durumu
- ROHS3 Compliant
- Drainsource On Resistancemax
- 0.0039Ohm
- Reach Svhc
- No SVHC
- Montaj Tipi
- Surface Mount
- Drain Currentmax Abs Id
- 19A
- Yayın Yılı
- 2010
- Ambalaj
- Cut Tape (CT)
- Threshold Voltage
- 3.4V
- Rds On Max Id Vgs
- 3.9m Ω @ 19A, 10V
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e3
- Drain To Source Breakdown Voltage
- 80V
- Continuous Drain Current Id
- 42A
- Nominal Vgs
- 3.4 V
- Avalanche Energy Rating Eas
- 252 mJ
- Power Dissipation
- 104W
- Input Capacitance Ciss Max Vds
- 7082pF @ 40V
- Yükseklik
- 1.05mm
- Genişlik
- 6mm
- Vgs Max
- ±20V
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 5mm
- Terminal Sayısı
- 8
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