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RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Gerilim
- 100V
- Continuous Drain Current Id
- 7.4A
- Gate Charge Qg Max Vgs
- 44nC @ 10V
- Ambalaj
- Tape & Reel (TR)
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Kılıf / Paket
- 8-PowerWDFN
- Vgs Max
- ±20V
- Seri
- UltraFET™
- Akım Değeri
- 22A
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e4
- Power Dissipation
- 2.5W
- Drain To Source Breakdown Voltage
- 100V
- Vgsth Max Id
- 4V @ 250μA
- Gate To Source Voltage Vgs
- 20V
- Turn Off Delay Time
- 36 ns
- Contact Plating
- Gold
- Radyasyon Dayanımı
- No
- Input Capacitance Ciss Max Vds
- 2680pF @ 50V
- Akım
- 22A
- Current Continuous Drain Id25
- 7.4A Ta 22A Tc
- Terminal Pozisyonu
- DUAL
- Number Of Elements
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fabrika Tedarik Süresi
- 10 Weeks
- Parça Durumu
- Active
- Genişlik
- 6mm
- ECCN Kodu
- EAR99
- Drive Voltage Max Rds On Min Rds On
- 6V 10V
- Montaj
- Surface Mount
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Kurşunsuz
- Lead Free
- Yükseklik
- 750μm
- Uzunluk
- 5mm
- Power Dissipation Max
- 2.5W Ta 78W Tc
- Fet Type
- N-Channel
- Rise Time
- 11ns
- Rds On Max Id Vgs
- 23m Ω @ 7.4A, 10V
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