Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- 8-PowerWDFN
- Continuous Drain Current Id
- 2.8A
- Gate Charge Qg Max Vgs
- 42nC @ 10V
- Ambalaj
- Tape & Reel (TR)
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2011
- Drain To Source Breakdown Voltage
- 250V
- Vgsth Max Id
- 4V @ 250μA
- Power Dissipation
- 2.5W
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e4
- Vgs Max
- ±20V
- Weight
- 210mg
- Akım Değeri
- 14A
- Seri
- UltraFET™
- Radyasyon Dayanımı
- No
- Turn Off Delay Time
- 36 ns
- Gate To Source Voltage Vgs
- 20V
- Number Of Elements
- 1
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Pozisyonu
- DUAL
- Current Continuous Drain Id25
- 2.8A Ta 14A Tc
- Input Capacitance Ciss Max Vds
- 2365pF @ 100V
- ECCN Kodu
- EAR99
- Genişlik
- 6mm
- Element Configuration
- Single
- Fabrika Tedarik Süresi
- 10 Weeks
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Type
- N-Channel
- Rise Time
- 10ns
- Uzunluk
- 5mm
- Yükseklik
- 750μm
- Kurşunsuz
- Lead Free
- Power Dissipation Max
- 2.5W Ta 78W Tc
- Montaj
- Surface Mount
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Drive Voltage Max Rds On Min Rds On
- 6V 10V
- Pin Sayısı
- 8
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