Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Terminal Pozisyonu
- DUAL
- Current Continuous Drain Id25
- 4.5A Ta 27A Tc
- Input Capacitance Ciss Max Vds
- 2610pF @ 75V
- Radyasyon Dayanımı
- No
- Turn Off Delay Time
- 38 ns
- Contact Plating
- Gold
- Gate To Source Voltage Vgs
- 20V
- Yayın Yılı
- 2006
- Drain To Source Breakdown Voltage
- 150V
- Vgsth Max Id
- 4V @ 250μA
- Power Dissipation
- 2.5W
- JESD-609 Kodu
- e4
- Montaj Tipi
- Surface Mount
- Vgs Max
- ±20V
- Weight
- 210mg
- Akım Değeri
- 4.5A
- Seri
- UltraFET™
- Reach Svhc
- No SVHC
- Kılıf / Paket
- 8-PowerWDFN
- Continuous Drain Current Id
- 4.5A
- Gate Charge Qg Max Vgs
- 43nC @ 10V
- Ambalaj
- Tape & Reel (TR)
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Transistor Application
- SWITCHING
- Voltage Rated Dc
- 150V
- Terminal Sayısı
- 8
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Threshold Voltage
- 3V
- Kurşunsuz Kodu
- yes
- Operating Mode
- ENHANCEMENT MODE
- Drain Currentmax Abs Id
- 27A
- Direnç
- 47MOhm
- Turn On Delay Time
- 11 ns
- Case Connection
- DRAIN
- Pin Sayısı
- 8
- Fall Time Typ
- 31 ns
- Pulsed Drain Currentmax Idm
- 30A
- Rds On Max Id Vgs
- 47m Ω @ 4.5A, 10V
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