FDL100N50F

Specifications

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

3

Fall Time Typ

105 ns

Terminal Kaplaması

Tin (Sn)

Avalanche Energy Rating Eas

5000 mJ

Parça Durumu

Active

Rds On Max Id Vgs

55m Ω @ 50A, 10V

Vgs Max

±30V

Transistor Application

SWITCHING

Ambalaj

Tube

Current Continuous Drain Id25

100A Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Qualification Status

Not Qualified

Montaj Tipi

Through Hole

Power Dissipation Max

2500W Tc

Continuous Drain Current Id

100A

Drive Voltage Max Rds On Min Rds On

10V

Threshold Voltage

3V

Weight

6.756g

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

30

Gate To Source Voltage Vgs

30V

Turn On Delay Time

63 ns

Fabrika Tedarik Süresi

8 Weeks

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Pin Sayısı

3

JESD-609 Kodu

e3

Genişlik

5mm

Element Configuration

Single

Pulsed Drain Currentmax Idm

400A

Seri

UniFET™

Yayın Yılı

2013

Input Capacitance Ciss Max Vds

12000pF @ 25V

Number Of Channels

1

Power Dissipation

2.5kW

Drainsource On Resistancemax

0.055Ohm

Drain To Source Breakdown Voltage

500V

Rise Time

186ns