FDI030N06

Specifications

Gate Charge Qg Max Vgs

151nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Breakdown Voltage

60V

Rise Time

178ns

RoHS Durumu

ROHS3 Compliant

Uzunluk

10.29mm

Input Capacitance Ciss Max Vds

9815pF @ 25V

Continuous Drain Current Id

193A

Power Dissipation

231W

Operating Mode

ENHANCEMENT MODE

Weight

2.387g

Yükseklik

4.83mm

Kurşunsuz Kodu

yes

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Vgsth Max Id

4.5V @ 250μA

Turn Off Delay Time

54 ns

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Fet Type

N-Channel

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

1

Radyasyon Dayanımı

No

Genişlik

9.65mm

JESD-609 Kodu

e3

Pin Sayısı

3

Parça Durumu

Active

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Turn On Delay Time

39 ns

Terminal Kaplaması

Tin (Sn)

Fall Time Typ

33 ns

Terminal Sayısı

3

Fabrika Tedarik Süresi

9 Weeks

Pulsed Drain Currentmax Idm

772A

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Current Continuous Drain Id25

120A Tc

Vgs Max

±20V