FDD86250

Specifications

Fet Type

N-Channel

Case Connection

DRAIN

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

2110pF @ 75V

Turn Off Delay Time

20 ns

Weight

260.37mg

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fall Time Typ

4 ns

Gate To Source Voltage Vgs

20V

ECCN Kodu

EAR99

Continuous Drain Current Id

8A

Drain Currentmax Abs Id

8A

Direnç

45MOhm

Power Dissipation Max

3.1W Ta 132W Tc

Jesd30 Code

R-PSSO-G2

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Yükseklik

2.517mm

Current Continuous Drain Id25

8A Ta 50A Tc

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Genişlik

6.22mm

Yayın Yılı

2017

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

40A

Threshold Voltage

2.9V

Transistor Element Material

SILICON

Number Of Channels

1

Power Dissipation

3.1W

Vgs Max

±20V

Seri

PowerTrench®

Max Junction Temperature Tj

150°C

Rds On Max Id Vgs

22m Ω @ 8A, 10V

Drain To Source Breakdown Voltage

150V

Pin Sayısı

3

Montaj

Surface Mount

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63