FDD86102LZ

Specifications

Fet Type

N-Channel

Case Connection

DRAIN

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

1540pF @ 50V

Turn Off Delay Time

20 ns

Weight

260.37mg

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Nominal Vgs

1.5 V

Fall Time Typ

2.3 ns

Gate To Source Voltage Vgs

20V

ECCN Kodu

EAR99

Continuous Drain Current Id

8A

Drain Currentmax Abs Id

8A

Power Dissipation Max

3.1W Ta 54W Tc

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

8A Ta 35A Tc

Yükseklik

2.39mm

Radyasyon Dayanımı

No

Genişlik

6.22mm

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2006

Avalanche Energy Rating Eas

84 mJ

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

40A

Terminal Formu

GULL WING

Threshold Voltage

1.5V

Transistor Element Material

SILICON

Power Dissipation

54W

Vgs Max

±20V

Seri

PowerTrench®

Drain To Source Breakdown Voltage

100V

Rds On Max Id Vgs

22.5m Ω @ 8A, 10V

Pin Sayısı

3

Montaj

Surface Mount

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63