FDD850N10L

Specifications

Vgsth Max Id

2.5V @ 250μA

Drive Voltage Max Rds On Min Rds On

5V 10V

Uzunluk

6.73mm

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Rise Time

21ns

Drainsource On Resistancemax

0.096Ohm

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

28.9nC @ 10V

Turn On Delay Time

17 ns

Fabrika Tedarik Süresi

8 Weeks

Element Configuration

Single

Number Of Elements

1

Terminal Sayısı

2

Power Dissipation

50W

Vgs Max

±20V

Seri

PowerTrench®

Rds On Max Id Vgs

75m Ω @ 12A, 10V

Drain To Source Breakdown Voltage

100V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Montaj

Surface Mount

Pin Sayısı

3

Kurşunsuz Kodu

yes

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

50W Tc

Current Continuous Drain Id25

15.7A Tc

Yükseklik

2.39mm

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Tin (Sn)

Genişlik

6.22mm

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Yayın Yılı

2010

Case Connection

DRAIN

Fet Type

N-Channel

Parça Durumu

Active