Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N-Channel
- Case Connection
- DRAIN
- Turn Off Delay Time
- 75 ns
- Input Capacitance Ciss Max Vds
- 635pF @ 25V
- JESD-609 Kodu
- e3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Weight
- 260.37mg
- Parça Durumu
- Active
- Jedec95 Code
- TO-252AA
- Fall Time Typ
- 30 ns
- Gate To Source Voltage Vgs
- 20V
- ECCN Kodu
- EAR99
- Continuous Drain Current Id
- 6.2A
- Direnç
- 550MOhm
- Jesd30 Code
- R-PSSO-G2
- Power Dissipation Max
- 56W Tc
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Kaplaması
- Tin (Sn)
- RoHS Durumu
- ROHS3 Compliant
- Yükseklik
- 2.39mm
- Current Continuous Drain Id25
- 6.2A Tc
- Genişlik
- 6.22mm
- Ambalaj
- Tape & Reel (TR)
- Radyasyon Dayanımı
- No
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 25A
- Terminal Formu
- GULL WING
- Yayın Yılı
- 2017
- Transistor Element Material
- SILICON
- Power Dissipation
- 56W
- Vgs Max
- ±20V
- Seri
- UniFET™
- Rds On Max Id Vgs
- 550m Ω @ 3.1A, 10V
- Drain To Source Breakdown Voltage
- 250V
- Montaj
- Surface Mount
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pin Sayısı
- 3
- Kurşunsuz
- Lead Free
- Kurşunsuz Kodu
- yes
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