Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Element Configuration
- Single
- Number Of Elements
- 1
- Terminal Sayısı
- 2
- Gate Charge Qg Max Vgs
- 16.6nC @ 10V
- Montaj Tipi
- Surface Mount
- Fabrika Tedarik Süresi
- 4 Weeks
- Temel Parça No
- FDD6N50
- Turn On Delay Time
- 6 ns
- Lifecycle Status
- ACTIVE (Last Updated: 20 hours ago)
- Rise Time
- 55ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Uzunluk
- 6.73mm
- Vgsth Max Id
- 5V @ 250μA
- Kurşunsuz Kodu
- yes
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 3
- Montaj
- Surface Mount
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain To Source Breakdown Voltage
- 500V
- Rds On Max Id Vgs
- 900m Ω @ 3A, 10V
- Power Dissipation
- 89W
- Vgs Max
- ±30V
- Seri
- UniFET™
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2016
- Avalanche Energy Rating Eas
- 270 mJ
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 24A
- Terminal Formu
- GULL WING
- Radyasyon Dayanımı
- No
- Genişlik
- 6.22mm
- Ambalaj
- Tape & Reel (TR)
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 6A Tc
- Yükseklik
- 2.39mm
- Terminal Kaplaması
- Tin (Sn)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Dissipation Max
- 89W Tc
- Jesd30 Code
- R-PSSO-G2
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