Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Fabrika Tedarik Süresi
- 4 Weeks
- Turn On Delay Time
- 8.3 ns
- Ambalaj
- Tape & Reel (TR)
- Gate Charge Qg Max Vgs
- 6.1nC @ 10V
- Reach Svhc
- No SVHC
- Montaj Tipi
- Surface Mount
- Avalanche Energy Rating Eas
- 60 mJ
- Terminal Sayısı
- 2
- Terminal Formu
- GULL WING
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Contact Plating
- Tin
- Threshold Voltage
- 5V
- Transistor Element Material
- SILICON
- Element Configuration
- Single
- Number Of Elements
- 1
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgsth Max Id
- 5V @ 250μA
- Direnç
- 800mOhm
- Power Dissipation Max
- 40W Tc
- Jesd30 Code
- R-PSSO-G2
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 5.6ns
- Current Continuous Drain Id25
- 4.5A Tc
- Lifecycle Status
- ACTIVE (Last Updated: 19 hours ago)
- RoHS Durumu
- ROHS3 Compliant
- Fall Time Typ
- 12.8 ns
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Montaj
- Surface Mount
- Gate To Source Voltage Vgs
- 30V
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Continuous Drain Current Id
- 4.5A
- Kurşunsuz Kodu
- yes
- Fet Type
- N-Channel
- Seri
- UniFET™
- Vgs Max
- ±30V
- Power Dissipation
- 40W
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