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FDD6030L

ON Semiconductor

FDD6030L

Single MOSFETs Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Nem Hassasiyeti (MSL)
1 (Unlimited)
Weight
260.37mg
Parça Durumu
Active
Rds On Max Id Vgs
14.5m Ω @ 12A, 10V
Drain To Source Breakdown Voltage
30V
Turn Off Delay Time
29 ns
Input Capacitance Ciss Max Vds
1230pF @ 15V
Power Dissipation
3.2W
Vgs Max
±20V
Case Connection
DRAIN
Seri
PowerTrench®
Fet Type
N-Channel
ECCN Kodu
EAR99
Continuous Drain Current Id
50A
Kurşunsuz Kodu
yes
Gate To Source Voltage Vgs
20V
Pin Sayısı
3
Fall Time Typ
12 ns
Montaj
Surface Mount
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Durumu
ROHS3 Compliant
Current Continuous Drain Id25
12A Ta 50A Tc
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Çalışma Sıcaklığı
-55°C~175°C TJ
Rise Time
7ns
Power Dissipation Max
3.2W Ta 56W Tc
Jesd30 Code
R-PSSO-G2
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Vgsth Max Id
3V @ 250μA
Transistor Element Material
SILICON
Number Of Elements
1
Element Configuration
Single
Terminal Sayısı
2
Transistor Application
SWITCHING
Terminal Formu
GULL WING
Operating Mode
ENHANCEMENT MODE
Gate Charge Qg Max Vgs
28nC @ 5V
Montaj Tipi
Surface Mount
Fabrika Tedarik Süresi
10 Weeks
Radyasyon Dayanımı
No

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