FDD5N50UTM-WS

Specifications

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

5V @ 250μA

Power Dissipation Max

40W Tc

Jesd30 Code

R-PSSO-G2

Drainsource On Resistancemax

2Ohm

Terminal Kaplaması

Tin (Sn)

Rise Time

21ns

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Lifecycle Status

ACTIVE (Last Updated: 12 hours ago)

Current Continuous Drain Id25

3A Tc

Fabrika Tedarik Süresi

8 Weeks

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Turn On Delay Time

14 ns

Gate Charge Qg Max Vgs

15nC @ 10V

Montaj Tipi

Surface Mount

Terminal Sayısı

2

Avalanche Energy Rating Eas

275 mJ

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Element Configuration

Single

Number Of Elements

1

Transistor Element Material

SILICON

Fet Type

N-Channel

Power Dissipation

40W

Vgs Max

±30V

Case Connection

DRAIN

Seri

FRFET®

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

650pF @ 25V

Turn Off Delay Time

27 ns

Weight

260.37mg

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Drain To Source Breakdown Voltage

500V

Rds On Max Id Vgs

2 Ω @ 1.5A, 10V

Pin Sayısı

3

Jedec95 Code

TO-252AA