FDD3N50NZTM

Specifications

Case Connection

DRAIN

Fet Type

N-Channel

Parça Durumu

Active

Weight

260.37mg

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Turn Off Delay Time

26 ns

Input Capacitance Ciss Max Vds

280pF @ 25V

Gate To Source Voltage Vgs

25V

Fall Time Typ

17 ns

ECCN Kodu

EAR99

Continuous Drain Current Id

2.5A

Ds Breakdown Voltagemin

500V

Power Dissipation Max

40W Tc

Jesd30 Code

R-PSSO-G2

Current Continuous Drain Id25

2.5A Tc

Yükseklik

2.39mm

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Radyasyon Dayanımı

No

Genişlik

6.22mm

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Yayın Yılı

2009

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Power Dissipation

40W

Vgs Max

±25V

Seri

UniFET-II™

Rds On Max Id Vgs

2.5 Ω @ 1.25A, 10V

Kurşunsuz

Lead Free

Drain To Source Voltage Vdss

500V

Pin Sayısı

3

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Montaj

Surface Mount

Kurşunsuz Kodu

yes

Uzunluk

6.73mm

Drive Voltage Max Rds On Min Rds On

10V