FDD13AN06A0-F085

Specifications

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Terminal Sayısı

2

Avalanche Energy Rating Eas

56 mJ

Transistor Element Material

SILICON

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Ambalaj

Tape & Reel (TR)

Temel Parça No

FDD13AN06

Fabrika Tedarik Süresi

4 Weeks

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

29nC @ 10V

Drainsource On Resistancemax

0.0135Ohm

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

Yüzey Montaj

YES

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

9.9A Ta 50A Tc

Vgsth Max Id

4V @ 250μA

Drive Voltage Max Rds On Min Rds On

6V 10V

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

115W Tc

Terminal Pozisyonu

SINGLE

Kurşunsuz Kodu

yes

Ds Breakdown Voltagemin

60V

Drain Currentmax Abs Id

9.9A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Qualification Status

Not Qualified

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Jedec95 Code

TO-252AA

REACH Uyumluluk Kodu

not_compliant

Drain To Source Voltage Vdss

60V

Input Capacitance Ciss Max Vds

1350pF @ 25V

JESD-609 Kodu

e3

Rds On Max Id Vgs

13.5m Ω @ 50A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED