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FDD10AN06A0-F085

ON Semiconductor

FDD10AN06A0-F085

Single MOSFETs Transistors

In StockRoHS: Compliant

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Verified sourcing

RoHS

Compliant

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Specifications

RoHS Durumu
ROHS3 Compliant
Current Continuous Drain Id25
11A Ta
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Çalışma Sıcaklığı
-55°C~175°C TJ
Rise Time
79ns
Terminal Kaplaması
Tin (Sn)
Jesd30 Code
R-PSSO-G2
Power Dissipation Max
135W Tc
Vgsth Max Id
4V @ 250μA
Drive Voltage Max Rds On Min Rds On
10V
Transistor Element Material
SILICON
Number Of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Terminal Formu
GULL WING
Operating Mode
ENHANCEMENT MODE
Avalanche Energy Rating Eas
429 mJ
Terminal Sayısı
2
Montaj Tipi
Surface Mount
Gate Charge Qg Max Vgs
37nC @ 10V
Ambalaj
Tape & Reel (TR)
Turn On Delay Time
8 ns
Fabrika Tedarik Süresi
42 Weeks
Rds On Max Id Vgs
10.5m Ω @ 50A, 10V
Drain To Source Breakdown Voltage
60V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Weight
260.37mg
Parça Durumu
Active
Turn Off Delay Time
32 ns
Input Capacitance Ciss Max Vds
1840pF @ 25V
JESD-609 Kodu
e3
Seri
Automotive, AEC-Q101, PowerTrench®
Case Connection
DRAIN
Vgs Max
±20V
Power Dissipation
135W
Fet Type
N-Channel
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Number Of Channels
1
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Kurşunsuz Kodu
yes

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