FDC855N

Specifications

Current Continuous Drain Id25

6.1A Ta

Rds On Max Id Vgs

27m Ω @ 6.1A, 10V

Power Dissipation

1.6W

Operating Mode

ENHANCEMENT MODE

Direnç

27MOhm

Radyasyon Dayanımı

No

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

13nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

6.1A

Rise Time

2ns

Terminal Sayısı

6

Reach Svhc

No SVHC

Fall Time Typ

2 ns

Genişlik

1.7mm

Number Of Elements

1

Feedback Capmax Crss

95 pF

ECCN Kodu

EAR99

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Turn Off Delay Time

14 ns

Transistor Element Material

SILICON

Seri

PowerTrench®

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

Tin (Sn)

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Power Dissipation Max

1.6W Ta

Yükseklik

1mm

Transistor Application

SWITCHING

Nominal Vgs

2 V

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Breakdown Voltage

30V

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

655pF @ 15V

Ambalaj

Tape & Reel (TR)

Weight

36mg