FDC653N

Specifications

Power Dissipation

1.6W

Operating Mode

ENHANCEMENT MODE

Akım Değeri

5A

Current Continuous Drain Id25

5A Ta

Rds On Max Id Vgs

35m Ω @ 5A, 10V

Reach Svhc

No SVHC

Fall Time Typ

12 ns

Number Of Elements

1

Genişlik

1.7mm

Gate Charge Qg Max Vgs

17nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

5A

Rise Time

12ns

Terminal Sayısı

6

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Kurşunsuz Kodu

yes

Direnç

35MOhm

Fet Type

N-Channel

Radyasyon Dayanımı

No

Turn Off Delay Time

13 ns

Transistor Element Material

SILICON

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Yükseklik

1.1mm

Voltage Rated Dc

30V

Terminal Pozisyonu

DUAL

Terminal

SMD/SMT

Power Dissipation Max

1.6W Ta

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

350pF @ 15V

Ambalaj

Tape & Reel (TR)

Weight

30mg

Kurşunsuz

Lead Free

Nominal Vgs

1.7 V

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Breakdown Voltage

30V