FDC642P-F085

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

16nC @ 4.5V

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

640pF @ 10V

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

6

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Fet Type

P-Channel

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz Kodu

yes

Terminal Pozisyonu

DUAL

Power Dissipation Max

1.2W Ta

Jesd30 Code

R-PDSO-G6

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

4A Ta

Rds On Max Id Vgs

65m Ω @ 4A, 4.5V

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Parça Durumu

Active

Ds Breakdown Voltagemin

20V

Drain Currentmax Abs Id

4A

Vgs Max

±8V

Seri

Automotive, AEC-Q101, PowerTrench®

Pulsed Drain Currentmax Idm

20A

Drainsource On Resistancemax

0.065Ohm

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Avalanche Energy Rating Eas

72 mJ

Transistor Element Material

SILICON

Yüzey Montaj

YES

Qualification Status

Not Qualified

Drain To Source Voltage Vdss

20V

Vgsth Max Id

1.5V @ 250μA

Fabrika Tedarik Süresi

15 Weeks