FDC5661N-F085

Specifications

Qualification Status

Not Qualified

Drain To Source Voltage Vdss

60V

Vgsth Max Id

3V @ 250μA

Fabrika Tedarik Süresi

26 Weeks

Transistor Element Material

SILICON

Yüzey Montaj

YES

Drainsource On Resistancemax

0.047Ohm

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Seri

Automotive, AEC-Q101, PowerTrench®

Pulsed Drain Currentmax Idm

20A

Terminal Kaplaması

Tin (Sn)

Vgs Max

±20V

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

60V

Drain Currentmax Abs Id

4.3A

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Parça Durumu

Active

Current Continuous Drain Id25

4.3A Ta

Rds On Max Id Vgs

47m Ω @ 4.3A, 10V

Jesd30 Code

R-PDSO-G6

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

DUAL

Power Dissipation Max

1.6W Ta

Terminal Formu

GULL WING

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz Kodu

yes

Fet Type

N-Channel

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate Charge Qg Max Vgs

19nC @ 10V

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

763pF @ 25V

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

6