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FDC3535

ON Semiconductor

FDC3535

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Power Dissipation
1.6W
Operating Mode
ENHANCEMENT MODE
Rds On Max Id Vgs
183m Ω @ 2.1A, 10V
Current Continuous Drain Id25
2.1A Ta
Rise Time
3.1ns
Terminal Sayısı
6
Nem Hassasiyeti (MSL)
1 (Unlimited)
Gate Charge Qg Max Vgs
20nC @ 10V
Continuous Drain Current Id
-2.1A
Reach Svhc
No SVHC
Genişlik
1.7mm
Number Of Elements
1
Feedback Capmax Crss
40 pF
Fall Time Typ
2.9 ns
Fet Type
P-Channel
Radyasyon Dayanımı
No
Kurşunsuz Kodu
yes
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Kılıf / Paket
SOT-23-6 Thin, TSOT-23-6
Transistor Element Material
SILICON
Turn Off Delay Time
23 ns
ECCN Kodu
EAR99
Montaj Tipi
Surface Mount
JESD-609 Kodu
e3
Terminal Kaplaması
TIN
Seri
PowerTrench®
Gate To Source Voltage Vgs
20V
Power Dissipation Max
1.6W Ta
Terminal Pozisyonu
DUAL
Yükseklik
1.1mm
Ambalaj
Tape & Reel (TR)
Weight
36mg
Kurşunsuz
Lead Free
Tepe Reflow Sıcaklığı (°C)
260
Input Capacitance Ciss Max Vds
880pF @ 40V
RoHS Durumu
ROHS3 Compliant
Tepe Reflow Süresi (maks. sn)
30
Max Junction Temperature Tj
150°C
Transistor Application
SWITCHING
Drain To Source Breakdown Voltage
-80V

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