FDC30N20DZ

Specifications

Fet Type

N-Channel

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Formu

GULL WING

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

535pF @ 15V

Gate Charge Qg Max Vgs

7.9nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

6

Ambalaj

Tape & Reel (TR)

Weight

36mg

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Feedback Capmax Crss

30 pF

Current Continuous Drain Id25

4.6A Ta

Rds On Max Id Vgs

31m Ω @ 4.6A, 10V

Jedec95 Code

MO-193AA

Power Dissipation Max

960mW Ta

Jesd30 Code

R-PDSO-G6

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Terminal Kaplaması

Tin (Sn)

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Montaj Tipi

Surface Mount

Parça Durumu

Active

Element Configuration

Dual

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

30V

Drain Currentmax Abs Id

4.6A

Drain To Source Voltage Vdss

30V

Fabrika Tedarik Süresi

10 Weeks

Vgsth Max Id

3V @ 250μA

Montaj

Surface Mount

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Drainsource On Resistancemax

0.031Ohm

Transistor Element Material

SILICON