FDB86360-F085

Specifications

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

1167 mJ

REACH Uyumluluk Kodu

not_compliant

Input Capacitance Ciss Max Vds

14600pF @ 25V

Case Connection

DRAIN

Terminal Kaplaması

Tin (Sn)

Jesd30 Code

R-PSSO-G2

Transistor Element Material

SILICON

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

4.5V @ 250μA

Terminal Formu

GULL WING

Vgs Max

±20V

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active

Number Of Elements

1

Rds On Max Id Vgs

1.8m Ω @ 80A, 10V

Montaj Tipi

Surface Mount

Yüzey Montaj

YES

RoHS Durumu

ROHS3 Compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.0018Ohm

Current Continuous Drain Id25

110A Tc

Gate Charge Qg Max Vgs

253nC @ 10V

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz Kodu

yes

Fet Type

N-Channel

Power Dissipation Max

333W Tc

Drain To Source Voltage Vdss

80V

Seri

Automotive, AEC-Q101, PowerTrench®

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

33 Weeks

Drain Currentmax Abs Id

110A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Ds Breakdown Voltagemin

80V

Transistor Application

SWITCHING