FDB8160-F085

Specifications

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±20V

Parça Durumu

Obsolete

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Rds On Max Id Vgs

1.8m Ω @ 80A, 10V

Number Of Elements

1

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

11825pF @ 15V

Avalanche Energy Rating Eas

1290 mJ

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

SINGLE

Terminal Sayısı

2

Transistor Element Material

SILICON

Case Connection

DRAIN

Terminal Kaplaması

Tin (Sn)

Jesd30 Code

R-PSSO-G2

Terminal Formu

GULL WING

Vgsth Max Id

4V @ 250μA

Çalışma Sıcaklığı

-55°C~175°C TJ

Kurşunsuz Kodu

yes

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Seri

Automotive, AEC-Q101, PowerTrench®

Drain To Source Voltage Vdss

30V

Fet Type

N-Channel

Power Dissipation Max

254W Tc

Drain Currentmax Abs Id

80A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

30V

Yüzey Montaj

YES

Yayın Yılı

2008

Configuration

SINGLE WITH BUILT-IN DIODE

Current Continuous Drain Id25

80A Tc

Drainsource On Resistancemax

0.0018Ohm

Gate Charge Qg Max Vgs

243nC @ 10V

Qualification Status

Not Qualified