FDB38N30U

Specifications

Lifecycle Status

ACTIVE (Last Updated: 21 hours ago)

Kurşunsuz Kodu

yes

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Seri

UniFET™

Drain To Source Breakdown Voltage

300V

Power Dissipation Max

313W Tc

Genişlik

9.65mm

Transistor Application

SWITCHING

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Power Dissipation

313W

Vgs Max

±30V

Pin Sayısı

3

Gate To Source Voltage Vgs

30V

Rds On Max Id Vgs

120m Ω @ 19A, 10V

Number Of Elements

1

Turn Off Delay Time

133 ns

Input Capacitance Ciss Max Vds

3340pF @ 25V

Turn On Delay Time

33 ns

REACH Uyumluluk Kodu

not_compliant

Transistor Element Material

SILICON

Continuous Drain Current Id

38A

Case Connection

DRAIN

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Type

N-Channel

Fabrika Tedarik Süresi

8 Weeks

Operating Mode

ENHANCEMENT MODE

Weight

1.31247g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

10.67mm

Yayın Yılı

2013

ECCN Kodu

EAR99

Current Continuous Drain Id25

38A Tc

Gate Charge Qg Max Vgs

73nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

62 ns