Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Power Dissipation
- 235W
- Power Dissipation Max
- 235W Tc
- Seri
- UniFET™
- Drain To Source Breakdown Voltage
- 250V
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 19 hours ago)
- Kurşunsuz Kodu
- yes
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Application
- SWITCHING
- Genişlik
- 11.33mm
- Input Capacitance Ciss Max Vds
- 2135pF @ 25V
- Turn On Delay Time
- 35 ns
- Nominal Vgs
- 3 V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Formu
- GULL WING
- Continuous Drain Current Id
- 33A
- Case Connection
- DRAIN
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 30V
- Additional Feature
- FAST SWITCHING, AVALANCHE RATED
- Vgs Max
- ±30V
- Turn Off Delay Time
- 75 ns
- Contact Plating
- Tin
- Number Of Elements
- 1
- Rds On Max Id Vgs
- 94m Ω @ 16.5A, 10V
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2004
- Gate Charge Qg Max Vgs
- 48nC @ 10V
- Reach Svhc
- No SVHC
- Current Continuous Drain Id25
- 33A Tc
- Fet Type
- N-Channel
- Weight
- 1.31247g
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Uzunluk
- 10.67mm
- Operating Mode
- ENHANCEMENT MODE
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