FDB2532-F085

Specifications

Rds On Max Id Vgs

16m Ω @ 33A, 10V

Number Of Elements

1

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

6V 10V

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active

Transistor Element Material

SILICON

Terminal Sayısı

2

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Tin (Sn)

Case Connection

DRAIN

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

4V @ 250μA

Input Capacitance Ciss Max Vds

5870pF @ 25V

Terminal Pozisyonu

SINGLE

REACH Uyumluluk Kodu

not_compliant

Avalanche Energy Rating Eas

400 mJ

Fabrika Tedarik Süresi

2 Weeks

Drain Currentmax Abs Id

8A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

150V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Seri

Automotive, AEC-Q101, PowerTrench®

Power Dissipation Max

310W Tc

Fet Type

N-Channel

Drain To Source Voltage Vdss

150V

Drainsource On Resistancemax

0.016Ohm

Current Continuous Drain Id25

79A Tc

Gate Charge Qg Max Vgs

107nC @ 10V

Qualification Status

Not Qualified

Yüzey Montaj

YES

RoHS Durumu

ROHS3 Compliant