FDB20N50F

Specifications

Pulsed Drain Currentmax Idm

80A

Pin Sayısı

3

Gate To Source Voltage Vgs

30V

Vgs Max

±30V

Turn Off Delay Time

100 ns

Rds On Max Id Vgs

260m Ω @ 10A, 10V

Number Of Elements

1

Input Capacitance Ciss Max Vds

3390pF @ 25V

Turn On Delay Time

45 ns

REACH Uyumluluk Kodu

not_compliant

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Continuous Drain Current Id

20A

Case Connection

DRAIN

Seri

FRFET®, UniFET™

Drain To Source Breakdown Voltage

500V

Power Dissipation Max

250W Tc

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Genişlik

9.65mm

RoHS Durumu

ROHS3 Compliant

Power Dissipation

250W

Drainsource On Resistancemax

0.26Ohm

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fall Time Typ

60 ns

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount

Rise Time

120ns

Number Of Channels

1

Yükseklik

4.83mm

Element Configuration

Single

Vgsth Max Id

5V @ 250μA

Terminal Sayısı

2

Montaj

Surface Mount