FDB1D7N10CL7

Specifications

Drainsource On Resistancemax

0.00175Ohm

Current Continuous Drain Id25

268A Tc

Gate Charge Qg Max Vgs

163nC @ 10V

Yüzey Montaj

YES

Turn Off Timemax Toff

194ns

Feedback Capmax Crss

80 pF

Configuration

SINGLE WITH BUILT-IN DIODE

RoHS Durumu

RoHS Compliant

Jedec95 Code

TO-263CB

Fabrika Tedarik Süresi

20 Weeks

Drain Currentmax Abs Id

168A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab)

Ds Breakdown Voltagemin

100V

Kurşunsuz Kodu

yes

Turn On Timemax Ton

116ns

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Seri

PowerTrench®

Fet Type

N-Channel

Power Dissipation Max

250W Tc

Drain To Source Voltage Vdss

100V

Transistor Element Material

SILICON

Terminal Sayısı

6

Case Connection

DRAIN

Terminal Kaplaması

Tin (Sn)

Jesd30 Code

R-PSSO-G6

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

4V @ 700μA

Input Capacitance Ciss Max Vds

11600pF @ 50V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

595 mJ

Rds On Max Id Vgs

1.65m Ω @ 100A, 15V

Number Of Elements

1

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

6V 15V