FDB12N50TM

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

35 ns

Direnç

650MOhm

Montaj Tipi

Surface Mount

Rise Time

60ns

Yükseklik

4.83mm

Element Configuration

Single

Avalanche Energy Rating Eas

456 mJ

Vgsth Max Id

5V @ 250μA

Terminal Sayısı

2

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Tin (Sn)

Montaj

Surface Mount

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Uzunluk

10.67mm

Weight

1.31247g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

9 Weeks

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Yayın Yılı

2003

Qualification Status

Not Qualified

Gate Charge Qg Max Vgs

30nC @ 10V

Current Continuous Drain Id25

11.5A Tc

Pulsed Drain Currentmax Idm

46A

Gate To Source Voltage Vgs

30V

Pin Sayısı

3

Vgs Max

±30V

Turn Off Delay Time

45 ns

Rds On Max Id Vgs

650m Ω @ 6A, 10V

Number Of Elements

1

Turn On Delay Time

25 ns

Input Capacitance Ciss Max Vds

1315pF @ 25V

REACH Uyumluluk Kodu

not_compliant

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON