Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Additional Feature
- AVALANCHE RATED
- Vgs Max
- ±30V
- Pulsed Drain Currentmax Idm
- 112A
- Gate To Source Voltage Vgs
- 30V
- Pin Sayısı
- 3
- Rds On Max Id Vgs
- 175m Ω @ 14A, 10V
- Number Of Elements
- 1
- Turn Off Delay Time
- 192 ns
- Turn On Delay Time
- 67 ns
- Input Capacitance Ciss Max Vds
- 5387pF @ 25V
- HTS Kodu
- 8541.29.00.95
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 28A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Kurşunsuz Kodu
- yes
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Ambalaj
- Tube
- JESD-609 Kodu
- e3
- Drain To Source Breakdown Voltage
- 500V
- Seri
- UniFET™
- Power Dissipation Max
- 310W Tc
- Genişlik
- 5mm
- Transistor Application
- SWITCHING
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Drainsource On Resistancemax
- 0.175Ohm
- Power Dissipation
- 310W
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fall Time Typ
- 101 ns
- Parça Durumu
- Active
- Rise Time
- 137ns
- Montaj Tipi
- Through Hole
- Yükseklik
- 20.1mm
- Element Configuration
- Single
- Terminal Sayısı
- 3
- Terminal Kaplaması
- Tin (Sn)
- Montaj
- Through Hole
- Vgsth Max Id
- 5V @ 250μA
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