Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 9 Weeks
- Genişlik
- 5mm
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Weight
- 6.401g
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Uzunluk
- 15.8mm
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Kurşunsuz Kodu
- yes
- JESD-609 Kodu
- e3
- Ambalaj
- Tube
- Seri
- UniFET™
- Drain To Source Breakdown Voltage
- 500V
- Power Dissipation Max
- 310W Tc
- Fet Type
- N-Channel
- Current Continuous Drain Id25
- 28A Tc
- Gate Charge Qg Max Vgs
- 105nC @ 10V
- Power Dissipation
- 310W
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Rise Time
- 126ns
- Rds On Max Id Vgs
- 155m Ω @ 14A, 10V
- Number Of Elements
- 1
- Turn Off Delay Time
- 210 ns
- Contact Plating
- Tin
- Montaj Tipi
- Through Hole
- Direnç
- 155MOhm
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fall Time Typ
- 110 ns
- Vgs Max
- ±30V
- Parça Durumu
- Active
- Pin Sayısı
- 2
- Gate To Source Voltage Vgs
- 30V
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 28A
- Montaj
- Through Hole
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