Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Power Dissipation
- 270W
- Ambalaj
- Tube
- JESD-609 Kodu
- e3
- Kurşunsuz Kodu
- yes
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Power Dissipation Max
- 270W Tc
- Drain To Source Breakdown Voltage
- 500V
- Seri
- UniFET™
- Genişlik
- 5mm
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Transistor Application
- SWITCHING
- Turn On Delay Time
- 47 ns
- Input Capacitance Ciss Max Vds
- 4150pF @ 25V
- Continuous Drain Current Id
- 24A
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Vgs Max
- ±30V
- Gate To Source Voltage Vgs
- 30V
- Pin Sayısı
- 2
- Pulsed Drain Currentmax Idm
- 96A
- Number Of Elements
- 1
- Rds On Max Id Vgs
- 190m Ω @ 12A, 10V
- Turn Off Delay Time
- 164 ns
- Yayın Yılı
- 2013
- ECCN Kodu
- EAR99
- Current Continuous Drain Id25
- 24A Tc
- Reach Svhc
- No SVHC
- Gate Charge Qg Max Vgs
- 85nC @ 10V
- Fet Type
- N-Channel
- Operating Mode
- ENHANCEMENT MODE
- Fabrika Tedarik Süresi
- 4 Weeks
- Uzunluk
- 15.8mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Weight
- 6.401g
- Threshold Voltage
- 5V
- Element Configuration
- Single
- Yükseklik
- 20.1mm
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