Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Gate Charge Qg Max Vgs
- 59.5nC @ 10V
- Power Dissipation
- 280W
- Current Continuous Drain Id25
- 22A Tc
- Drain To Source Breakdown Voltage
- 500V
- Seri
- UniFET™
- Power Dissipation Max
- 280W Tc
- Fet Type
- N-Channel
- Kurşunsuz Kodu
- yes
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Ambalaj
- Tube
- Transistor Application
- SWITCHING
- Weight
- 6.401g
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fabrika Tedarik Süresi
- 4 Weeks
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 95 ns
- Input Capacitance Ciss Max Vds
- 3120pF @ 25V
- Element Configuration
- Single
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Vgsth Max Id
- 5V @ 250μA
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
- Montaj
- Through Hole
- Continuous Drain Current Id
- 22A
- Parça Durumu
- Active
- Pulsed Drain Currentmax Idm
- 88A
- Gate To Source Voltage Vgs
- 30V
- Pin Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fall Time Typ
- 105 ns
- Vgs Max
- ±30V
- Additional Feature
- FAST SWITCHING
- Turn Off Delay Time
- 100 ns
- Montaj Tipi
- Through Hole
- Rds On Max Id Vgs
- 230m Ω @ 11A, 10V
- Rise Time
- 375ns
- Number Of Elements
- 1
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