Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Continuous Drain Current Id
- 22A
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 3390pF @ 25V
- Turn On Delay Time
- 45 ns
- Turn Off Delay Time
- 100 ns
- Contact Plating
- Tin
- Number Of Elements
- 1
- Rds On Max Id Vgs
- 260m Ω @ 11A, 10V
- Pin Sayısı
- 2
- Gate To Source Voltage Vgs
- 30V
- Pulsed Drain Currentmax Idm
- 88A
- Vgs Max
- ±30V
- Power Dissipation
- 388W
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Transistor Application
- SWITCHING
- Genişlik
- 5mm
- Power Dissipation Max
- 388W Tc
- Seri
- UniFET™
- Drain To Source Breakdown Voltage
- 500V
- Ambalaj
- Tube
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Kurşunsuz Kodu
- yes
- Vgsth Max Id
- 5V @ 250μA
- Montaj
- Through Hole
- Jesd30 Code
- R-PSFM-T3
- Terminal Sayısı
- 3
- Element Configuration
- Single
- Yükseklik
- 20.1mm
- Montaj Tipi
- Through Hole
- Direnç
- 260MOhm
- Rise Time
- 120ns
- Parça Durumu
- Active
- Fall Time Typ
- 60 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Gate Charge Qg Max Vgs
- 65nC @ 10V
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