Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 16nC @ 10V
- Terminal Kaplaması
- Tin (Sn)
- Turn On Delay Time
- 12 ns
- Pin Sayısı
- 3
- Vgsth Max Id
- 5V @ 250μA
- ECCN Kodu
- EAR99
- Akım Değeri
- 4.6A
- Lifecycle Status
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
- Drain To Source Breakdown Voltage
- 600V
- Rds On Max Id Vgs
- 950m Ω @ 2.3A, 10V
- Current Continuous Drain Id25
- 4.6A Tc
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-251-3 Short Leads, IPak, TO-251AA
- JESD-609 Kodu
- e3
- Threshold Voltage
- 5V
- Kurşunsuz Kodu
- yes
- Seri
- SuperFET™
- Power Dissipation
- 54W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 40ns
- Drainsource On Resistancemax
- 0.95Ohm
- Vgs Max
- ±30V
- Continuous Drain Current Id
- 4.6A
- Terminal Sayısı
- 3
- Fet Type
- N-Channel
- Power Dissipation Max
- 54W Tc
- Montaj
- Through Hole
- Gate To Source Voltage Vgs
- 30V
- Weight
- 343.08mg
- Turn Off Delay Time
- 47 ns
- Voltage Rated Dc
- 600V
- Element Configuration
- Single
- Fall Time Typ
- 22 ns
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 600pF @ 25V
- Fabrika Tedarik Süresi
- 36 Weeks
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