Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Gate To Source Voltage Vgs
- 30V
- Fall Time Typ
- 32 ns
- Element Configuration
- Single
- Turn On Delay Time
- 35 ns
- Parça Durumu
- Active
- Yükseklik
- 16.07mm
- Rise Time
- 55ns
- Vgs Max
- ±30V
- Seri
- SuperFET™
- Turn Off Delay Time
- 75 ns
- Montaj
- Through Hole
- Terminal Kaplaması
- Tin (Sn)
- ECCN Kodu
- EAR99
- Power Dissipation
- 31W
- Genişlik
- 4.9mm
- Input Capacitance Ciss Max Vds
- 920pF @ 25V
- Continuous Drain Current Id
- 7A
- Terminal Sayısı
- 3
- Kurşunsuz Kodu
- yes
- Rds On Max Id Vgs
- 600m Ω @ 3.5A, 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 5V @ 250μA
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Dissipation Max
- 31W Tc
- Drain To Source Breakdown Voltage
- 600V
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- N-Channel
- Fabrika Tedarik Süresi
- 12 Weeks
- Montaj Tipi
- Through Hole
- Uzunluk
- 10.36mm
- Ambalaj
- Tube
- Jedec95 Code
- TO-220AB
- Drainsource On Resistancemax
- 0.6Ohm
- Radyasyon Dayanımı
- No
- Gate Charge Qg Max Vgs
- 30nC @ 10V
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-220-3 Full Pack, Formed Leads
- Transistor Element Material
- SILICON
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