FCPF7N60NT

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

520m Ω @ 3.4A, 10V

Power Dissipation Max

30.5W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Pulsed Drain Currentmax Idm

20.4A

Vgsth Max Id

4V @ 250μA

Kurşunsuz

Lead Free

Fet Type

N-Channel

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

600V

Avalanche Energy Rating Eas

79.4 mJ

Uzunluk

10.36mm

Montaj Tipi

Through Hole

Fabrika Tedarik Süresi

12 Weeks

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

35.6nC @ 10V

Ambalaj

Tube

Jedec95 Code

TO-220AB

Current Continuous Drain Id25

6.8A Tc

Transistor Element Material

SILICON

Kılıf / Paket

TO-220-3 Full Pack

Number Of Elements

1

Weight

2.27g

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Case Connection

ISOLATED

Yayın Yılı

2013

Drive Voltage Max Rds On Min Rds On

10V

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Fall Time Typ

12 ns

Threshold Voltage

2V

Gate To Source Voltage Vgs

30V

Rise Time

6ns

Yükseklik

16.07mm

Parça Durumu

Active

Turn On Delay Time

12 ns

Element Configuration

Single