FCPF190N60-F152

Specifications

Gate To Source Voltage Vgs

30V

Vgsth Max Id

3.5V @ 250μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Pulsed Drain Currentmax Idm

60.6A

Power Dissipation Max

39W Tc

Fall Time Typ

5 ns

Rds On Max Id Vgs

199m Ω @ 10A, 10V

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

14 Weeks

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

400 mJ

Vgs Max

±20V

Element Configuration

Single

Drain To Source Breakdown Voltage

600V

Turn On Delay Time

20 ns

Rise Time

10ns

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Fet Type

N-Channel

Current Continuous Drain Id25

20.2A Tc

Kılıf / Paket

TO-220-3 Full Pack

Transistor Element Material

SILICON

Jedec95 Code

TO-220AB

Ambalaj

Tube

Seri

SuperFET® II

Turn Off Delay Time

64 ns

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

74nC @ 10V

Terminal Kaplaması

Tin (Sn)

Number Of Channels

1

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Montaj

Through Hole

Transistor Application

SWITCHING

Continuous Drain Current Id

20.2A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

ISOLATED

Kurşunsuz Kodu

yes